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cha2494 - 98f rohs compliant ref. : dscha24941144 - 24 may 11 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 34 - 44ghz low noise amplifier gaas monolithic micr owave ic description the cha2494 - 98f is a wide band monolithic low noise amplifier. it is designed for a wide rang e of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0. 1 5m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features noise figure versus temperature main electrical characteristics tamb. = + 25c symbol p arameter min typ max unit freq frequency range 34 44 ghz gain linear gain 2 0 db nf noise figure 3 . 0 db oip3 3 rd order intercept point 2 0 dbm rfin rfout vg vd 0 1 2 3 4 5 6 7 8 9 10 32 34 36 38 40 42 44 46 frequency (ghz) noise figure (db) -40c +25c +85c
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 2 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb. = + 25c , vd = +4 v symbol parameter min typ max unit freq frequen cy range 3 4 44 ghz gain linear gain 2 0 db nf noise figure 3.0 db r l lin input return loss - 8 db r l out output return loss - 8 db oip3 output 3 rd order intercept point 2 0 dbm op1db output power @1db comp. 1 2 dbm vg gate voltage - 0. 4 5 v i d drain current 8 0 ma these values are representative of on - wafer measurements that are made without bonding wires at the rf ports. a bonding wire of typically 0. 3 to 0. 4 nh will improve the matching at the accesses. absolute maximum ratings (1) t amb.= + 25c symbol parameter values unit vd drain bias voltage 4.5 v v id drain bias current 1 6 0 ma vg gate bias voltage - 2 to +0.4 v tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +1 50 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= +25c symbol parameter values unit vd dc drain voltage 4 v id dc drain current controlled with vg 80 ma vg dc gate volt age - 0.45 v
34 - 44ghz low noise amplifier cha2494 - 98f ref. : dscha24941144 - 24 may 11 3 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical on wafer measurements tamb = +25c, vd = +4v, id = 8 0ma sij parameters noise figure -20 -15 -10 -5 0 5 10 15 20 25 20 25 30 35 40 45 50 frequency (ghz) s parameters (db) s21 s11 s22 0 1 2 3 4 5 6 7 8 9 10 34 35 36 37 38 39 40 frequency (ghz) noise figure (db)
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 4 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = +25c, vd = +4v, id = 8 0ma gain versus frequency & temperature return loss versus f requency 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 30 32 34 36 38 40 42 44 46 48 50 frequency (ghz) gain (db) +25c -40c +85c - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 30 32 34 36 38 40 42 44 46 48 50 return loss (db) frequency (ghz) input return loss output return loss
34 - 44ghz low noise amplifier cha2494 - 98f ref. : dscha24941144 - 24 may 11 5 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical test fixture measurements tamb = +25c, vd = +4v, id = 8 0ma noise figure versus frequency & temperature output power @ 1db comp. versus temperature at 80ma output power @ 1db comp. versus temperature at 120ma 0 1 2 3 4 5 6 7 8 9 10 32 34 36 38 40 42 44 46 frequency (ghz) noise figure (db) -40c +25c +85c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 34 36 38 40 42 44 pout at 1db comp. (dbm) frequency (ghz) 25 c - 40 c +85 c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 34 36 38 40 42 44 pout at 1db comp. (dbm) frequency (ghz) 25 c - 40 c +85 c
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 6 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typica l test fixture measurements tamb = +25c, vd = +4v, id = 80ma output ip3 versus frequency at 80ma output ip3 versus frequency at 120ma output ip3 versus temperature at 80ma & 40ghz output ip3 versus temperature at 120ma & 40ghz linea r gain versus current 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 oip3 (dbm) input power dcl (dbm) 34ghz 36ghz 38ghz 40ghz 42ghz 44ghz 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 oip3 (dbm) input power dcl (dbm) 34ghz 36ghz 38ghz 40ghz 42ghz 44ghz 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 oip3 (dbm) input power dcl (dbm) +85 c +25 c - 40 c 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 oip3 (dbm) input power dcl (dbm) +85 c +25 c - 40 c 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 35 36 37 38 39 40 41 42 43 44 linear gain (db) frequency (ghz) 80ma 120ma
34 - 44ghz low noise amplifier cha2494 - 98f ref. : dscha24941144 - 24 may 11 7 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 mechanical data note: supply feed should be bypassed. 25m diameter gold wire is to be preferred. chip thickness: 100m dc pad size: 86x83m rf pad size: 105x172m chip size : 2590x1160 35m all dimensions are in micrometers
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 8 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended assembly plan note: supply feed should be bypassed. 25m diameter gold wire is to be preferred. recommended circuit bonding table label type decoupling comment vd vd 120pf drain supply v g vg 120pf gate suppl y rfin rfout to vg dc supply feed to vd dc supply feed to vd dc supply feed 120pf 120pf
34 - 44ghz low noise amplifier cha2494 - 98f ref. : dscha24941144 - 24 may 11 9 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 evaluation mother board
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 10 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 dc schematic lna: 4v, 8 0ma vg # - 0.45v 34 25ma vd = 4v 10ma 150 550 1.9k 16 15ma 90 530 1.9k 16 500 1.5k 26 30ma 1.5k x4 vg # - 0.45v 34 25ma vd = 4v 10ma 150 550 1.9k 16 15ma 90 530 1.9k 16 500 1.5k 26 30ma 1.5k vg # - 0.45v 34 25ma vd = 4v 10ma 150 150 550 1.9k 16 15ma 90 90 530 1.9k 16 500 1.5k 26 30ma 1.5k x4 x4
34 - 44ghz low noise amplifier cha2494 - 98f ref. : dscha24941144 - 24 may 11 11 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 notes due to esd protection circuits on rf input and output, an external capacitance might be requested to isolate the product from external voltage that could be present on the rf accesses. esd protections is also implemente d on gate access common to 3 rd and 4 th stage (1 st and 2 nd stage are self - biased). due to bcb coating on the chip, qualification domain implies the chip must be glued. biasing conditions: vg could be tuned to reach 120ma in order to increase the o utput power and the gain (see page s 5 & 6). the current has no influence on noise figure . rfin rfout vg vd
cha2494 - 98f 34 - 44ghz low noise amplifier ref. : dscha24941144 - 24 may 11 12 / 12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivit y and handling recommendations for the ums package products. ordering information chip form: cha2494 - 98f /00 information furnished is believed to be accurate and reliable . however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implica tion or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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